Technical parameters/dissipated power: 360W (Tc)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 5100pF @25V(Vds)
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 360W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Last Time Buy
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTQ64N25P
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
TO-3P N-CH 250V 64A
|
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