Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.57 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 780 W
Technical parameters/threshold voltage: 6.5 V
Technical parameters/drain source voltage (Vds): 1.2 kV
Technical parameters/leakage source breakdown voltage: 1200 V
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 11100pF @25V(Vds)
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 780W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.13 mm
External dimensions/width: 5.21 mm
External dimensions/height: 21.34 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFK20N120P
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
Trans MOSFET N-CH 1.2kV 20A 3Pin(3+Tab) TO-264
|
||
IXFX20N120
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
IXYS SEMICONDUCTOR IXFX20N120 功率场效应管, MOSFET, HiPerFET, N沟道, 20 A, 1.2 kV, 750 mohm, 10 V, 4.5 V
|
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