Technical parameters/rise/fall time: 9ns, 8ns
Technical parameters/rise time: 16 ns
Technical parameters/descent time: 14 ns
Technical parameters/power supply voltage: 4.5V ~ 30V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXDN602SIATR
|
Clare | 类似代替 | SOIC-8 |
IXDN 系列 35 V 2 A 2.5 Ohm 双 低压侧 超快 MOSFET 驱动器 - SOIC-8
|
||
IXDN602SITR
|
Clare | 类似代替 | SOIC-8 |
低边 IGBT MOSFET 灌:2A 拉:2A
|
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