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Model IXFN150N10
Description Trans MOSFET N-CH 100V 150A 4Pin SOT-227B
Product QR code
Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
233.9  yuan 233.9yuan
1+:
$ 268.9862
10+:
$ 261.9691
50+:
$ 256.5894
100+:
$ 254.7182
200+:
$ 253.3148
500+:
$ 251.4436
1000+:
$ 250.2741
2000+:
$ 249.1046
Quantity
1+
10+
50+
100+
200+
Price
$268.9862
$261.9691
$256.5894
$254.7182
$253.3148
Price $ 268.9862 $ 261.9691 $ 256.5894 $ 254.7182 $ 253.3148
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6824) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 150 A

Technical parameters/dissipated power: 520 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/rise time: 60 ns

Technical parameters/Input capacitance (Ciss): 9000pF @25V(Vds)

Technical parameters/rated power (Max): 520 W

Technical parameters/descent time: 60 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 520W (Tc)

Encapsulation parameters/installation method: Chassis

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/length: 38.23 mm

External dimensions/width: 25.42 mm

External dimensions/height: 9.6 mm

External dimensions/packaging: SOT-227-4

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFN180N10 IXFN180N10 IXYS Semiconductor 类似代替 SOT-227-4
IXYS SEMICONDUCTOR IXFN180N10 晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
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