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Model IXFN180N07
Description Trans MOSFET N-CH 70V 180A 4Pin SOT-227B
Product QR code
Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
183.37  yuan 183.37yuan
1+:
$ 210.8698
10+:
$ 205.3688
50+:
$ 201.1514
100+:
$ 199.6845
200+:
$ 198.5843
500+:
$ 197.1174
1000+:
$ 196.2006
2000+:
$ 195.2837
Quantity
1+
10+
50+
100+
200+
Price
$210.8698
$205.3688
$201.1514
$199.6845
$198.5843
Price $ 210.8698 $ 205.3688 $ 201.1514 $ 199.6845 $ 198.5843
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7281) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 6 mΩ

Technical parameters/dissipated power: 520 W

Technical parameters/drain source voltage (Vds): 70 V

Technical parameters/leakage source breakdown voltage: 70 V

Technical parameters/rise time: 60 ns

Technical parameters/Input capacitance (Ciss): 9000pF @25V(Vds)

Technical parameters/descent time: 60 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 520W (Tc)

Encapsulation parameters/installation method: Chassis

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/length: 38.2 mm

External dimensions/width: 25.07 mm

External dimensions/height: 9.6 mm

External dimensions/packaging: SOT-227-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFN200N07 IXFN200N07 IXYS Semiconductor 类似代替 SOT-227-4
IXYS SEMICONDUCTOR IXFN200N07 晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
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