Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 44.0 A
Technical parameters/rise time: 18.0 ns
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 500W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/packaging: TO-264-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP11N80C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP11N80C3 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
|
||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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