Technical parameters/rise/fall time: 25ns, 18ns
Technical parameters/number of output interfaces: 1
Technical parameters/rise time: 35 ns
Technical parameters/output current (Max): 14 A
Technical parameters/descent time: 25 ns
Technical parameters/descent time (Max): 25 ns
Technical parameters/rise time (Max): 35 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 4.5V ~ 35V
Technical parameters/power supply voltage (Max): 35 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXDN614PI
|
IXYS Semiconductor | 完全替代 | DIP-8 |
低边 IGBT MOSFET 灌:14A 拉:14A
|
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