Technical parameters/rise/fall time: 10 ns
Technical parameters/number of output interfaces: 1
Technical parameters/output current: 9 A
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/power supply voltage: 4.5V ~ 35V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Telcom Semiconductor | 功能相似 | DIP |
MICROCHIP TC4421CPA.. 双功率芯片, 低压侧, 4.5V-18V电源, 9A输出, 33ns延迟, DIP-8
|
||
TC4421CPA
|
Microchip | 功能相似 | PDIP-8 |
MICROCHIP TC4421CPA.. 双功率芯片, 低压侧, 4.5V-18V电源, 9A输出, 33ns延迟, DIP-8
|
||
TC4422AVPA
|
Microchip | 功能相似 | PDIP-8 |
MICROCHIP TC4422AVPA 双路驱动器芯片, MOSFET, 低压侧, 4.5V-18V电源, 10A输出, 42ns延迟, DIP-8
|
||
UCC37321P
|
TI | 功能相似 | DIP-8 |
TEXAS INSTRUMENTS UCC37321P. 芯片, MOSFET, 低压侧, 4V-15V电源, 9A输出, 35ns延迟, DIP-8
|
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