Technical parameters/dissipated power: 250000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 40 ns
Technical parameters/rated power (Max): 250 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTG30N60A4
|
ON Semiconductor | 功能相似 | TO-247-3 |
分离式 IGBT，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
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IXDR30N120D1
|
IXYS Semiconductor | 功能相似 | TO-247 |
IXYS SEMICONDUCTOR IXDR30N120D1 单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
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