Technical parameters/rise/fall time: 7.5ns, 6.5ns
Technical parameters/number of output interfaces: 2
Technical parameters/descent time (Max): 15 ns
Technical parameters/rise time (Max): 15 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 4.5V ~ 35V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXDF602SIA
|
Clare | 完全替代 |
IXD 系列 双 低压侧 2 A 超快 MOSFET 驱动器 表面贴装 - SOIC-8
|
|||
IXDF602SIATR
|
IXYS Semiconductor | 完全替代 | SOIC-8 |
低边 IGBT MOSFET 灌:2A 拉:2A
|
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