Technical parameters/rise/fall time: 25ns, 23ns
Technical parameters/power supply voltage: 4.5V ~ 30V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXDD409SI
|
IXYS Semiconductor | 功能相似 | SOIC-8 |
MOSFET DRVR 9A 1Out Lo Side Non-Inv 8Pin SOIC
|
||
MIC4421ZN
|
Micrel | 功能相似 | DIP-8 |
MIC4421 系列 1.5 Ohm 9 A 峰值 低压侧 MOSFET 驱动器 - DIP-8
|
||
MIC4421ZN
|
Microchip | 功能相似 | PDIP-8 |
MIC4421 系列 1.5 Ohm 9 A 峰值 低压侧 MOSFET 驱动器 - DIP-8
|
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