Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 21.0 A
Technical parameters/dissipated power: 150000 mW
Technical parameters/rise time: 2.10 µs
Technical parameters/breakdown voltage (collector emitter): 430 V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL9V3040S3ST
|
Fairchild | 类似代替 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR ISL9V3040S3ST 单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
|
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