Technical parameters/rise/fall time: 26ns, 18ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 3 A
Technical parameters/rise time: 26 ns
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 6.8V ~ 13.2V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 10
Encapsulation parameters/Encapsulation: DFN-10
External dimensions/length: 3 mm
External dimensions/width: 3 mm
External dimensions/height: 1 mm
External dimensions/packaging: DFN-10
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL6622CBZ
|
Intersil | 类似代替 | SOIC-8 |
VR11.1兼容同步整流降压MOSFET驱动器 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
|
||
ISL6622CBZ
|
Renesas Electronics | 类似代替 | SOIC-8 |
VR11.1兼容同步整流降压MOSFET驱动器 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
|
||
|
|
Harris | 类似代替 |
半桥 MOSFET 灌:1.25A 拉:2A
|
|||
ISL6622CRZ
|
Intersil | 类似代替 | DFN-10 |
半桥 MOSFET 灌:1.25A 拉:2A
|
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