Technical parameters/power supply voltage (DC): 12.0 V, 12.0 V (max)
Technical parameters/rise/fall time: 26ns, 18ns
Technical parameters/number of output interfaces: 4
Technical parameters/power supply voltage: 10.8V ~ 13.2V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: SOIC-14
External dimensions/packaging: SOIC-14
Physical parameters/operating temperature: 0℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Renesas Electronics | 类似代替 | SOIC-14 |
Pre-POR OVP功能的高级同步降压双MOSFET驱动器
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ISL6614ACB
|
Intersil | 类似代替 | SOIC-14 |
Pre-POR OVP功能的高级同步降压双MOSFET驱动器
|
||
ISL6614ACB-T
|
Renesas Electronics | 类似代替 | SOIC-14 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
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||
ISL6614ACBZ
|
Intersil | 类似代替 | SOIC-14 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
||
|
|
Harris | 类似代替 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
|||
ISL6614ACBZ
|
Renesas Electronics | 类似代替 | SOIC-14 |
与预POR过压保护的双高级同步整流降压MOSFET驱动器 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
|
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