Technical parameters/power supply voltage (DC): 13.2V (max)
Technical parameters/rise/fall time: 26ns, 18ns
Technical parameters/number of output interfaces: 2
Technical parameters/power supply voltage: 10.8V ~ 13.2V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL6612ECBZ
|
Renesas Electronics | 完全替代 | SOIC-8 |
与保护功能先进的同步整流降压MOSFET驱动器 Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
|
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