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Model ISL6612ACRZ
Description MOSFET DRVR 3A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 10-Pin DFN EP
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Brand: Renesas Electronics
Packaging VFDFN-10
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6162) Minimum order quantity(1)
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Technical parameters/rise/fall time: 26ns, 18ns

Technical parameters/number of output interfaces: 2

Technical parameters/dissipated power: 1500 mW

Technical parameters/dissipated power (Max): 1500 mW

Technical parameters/power supply voltage: 10.8V ~ 13.2V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 10

Encapsulation parameters/Encapsulation: VFDFN-10

External dimensions/packaging: VFDFN-10

Physical parameters/operating temperature: 0℃ ~ 85℃

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
ISL6612ACR ISL6612ACR Intersil 完全替代 DFN-10
与预POR过压保护先进的同步整流降压MOSFET驱动器 Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612ACR ISL6612ACR Renesas Electronics 完全替代 VFDFN-10
与预POR过压保护先进的同步整流降压MOSFET驱动器 Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
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