Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 240 V
Technical parameters/Continuous drain current (Ids): 0.13A
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Philips | 功能相似 |
N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Infineon | 功能相似 | SOT-54 |
N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor
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