Technical parameters/power supply voltage (DC): 20.0V (max)
Technical parameters/working voltage: 10V ~ 20V
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: ≥10.0 V
Technical parameters/dissipated power: 0.625 W
Technical parameters/product series: IRS2106
Technical parameters/rise time: 220ns (Max)
Technical parameters/descent time: 80ns (Max)
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 220 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS2106SPBF
|
Infineon | 完全替代 | SOIC-8 |
INFINEON IRS2106SPBF 双路驱动器芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 600mA输出, 200ns延迟, SOIC-8
|
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