Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 140 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 140 A
Technical parameters/rise time: 6.90 ns
Technical parameters/Input capacitance (Ciss): 4010pF @15V(Vds)
Technical parameters/rated power (Max): 140 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR7833
|
Infineon | 类似代替 | TO-252-3 |
N沟道 30V 140A
|
||
IRLR7833PBF
|
International Rectifier | 类似代替 | TO-252-3 |
HEXFET® N 通道功率 MOSFET 超过 55A,Infineon ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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