Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 17.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/product series: IRLZ24NS
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/rise time: 20.0 ns
Technical parameters/Input capacitance (Ciss): 480pF @25V(Vds)
Technical parameters/rated power (Max): 3.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLZ24NS
|
Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 55V 18A
|
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IRLZ24NSTRLPBF
|
International Rectifier | 完全替代 | TO-263-3 |
HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
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STB36NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB36NF06LT4 晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 1 V
|
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