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Model IRLU3636PBF
Description N Channel power MOSFET 80A to 99A, Infineon Infineon discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) # # # MOSFET transistor, Infineon Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
Product QR code
Brand: Infineon
Packaging TO-251-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
6.96  yuan 6.96yuan
10+:
$ 8.3568
100+:
$ 7.9390
500+:
$ 7.6604
1000+:
$ 7.6465
2000+:
$ 7.5908
5000+:
$ 7.5211
7500+:
$ 7.4654
10000+:
$ 7.4376
Quantity
10+
100+
500+
1000+
2000+
Price
$8.3568
$7.9390
$7.6604
$7.6465
$7.5908
Price $ 8.3568 $ 7.9390 $ 7.6604 $ 7.6465 $ 7.5908
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5797) Minimum order quantity(10)
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Technical parameters/rated power: 143 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0054 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 143 W

Technical parameters/threshold voltage: 2.5 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 99A

Technical parameters/rise time: 216 ns

Technical parameters/Input capacitance (Ciss): 3779pF @50V(Vds)

Technical parameters/descent time: 96 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 143W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.73 mm

External dimensions/width: 2.39 mm

External dimensions/height: 7.49 mm

External dimensions/packaging: TO-251-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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