Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.80 A
Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 4.30 A
Technical parameters/rise time: 47.0 ns
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/width: 2.38 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Vishay Intertechnology | 完全替代 | TO-251-3 |
MOSFET N-CH 100V 4.3A I-PAK
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Samsung | 功能相似 |
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
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