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Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: IPAK
External dimensions/packaging: IPAK
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single
Other/Case/Package: IPAK
Other/Soft 랜イ동터극동: N-Channel
Other/ハ레イ?동항복압: 60 V
Other/Link Files 레イ류: 14 A
Other/력발산: 2500 mW
Other/저항 Drain Source RDS (on): 0.1 Ohm @ 5 V
Other/Typical 하강: 41 ns
Other/Typical 상승: 110 ns
Other/표준오프い Contact Us: 23 ns
Other/ị동: TUBE
Other/게イSoft - ?동항복압: 10 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IRF | 功能相似 |
INTERNATIONAL RECTIFIER IRLU024NPBF 场效应管, N 通道, MOSFET, 55V, 17A, IPAK 新
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IRLU024ZPBF
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Infineon | 功能相似 | TO-251-3 |
Trans MOSFET N-CH 55V 16A 3Pin(3+Tab) IPAK
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IRLU024ZPBF
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International Rectifier | 功能相似 | TO-251 |
Trans MOSFET N-CH 55V 16A 3Pin(3+Tab) IPAK
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