Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 17.0 A
Technical parameters/drain source resistance: 65.0 mΩ (max)
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 45W (Tc)
Technical parameters/product series: IRLU024N
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0V (min)
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 74.0 ns
Technical parameters/Input capacitance (Ciss): 480pF @25V(Vds)
Technical parameters/dissipated power (Max): 45W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRLU024N
|
Infineon | 功能相似 | IPAK |
IPAK N-CH 55V 17A
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AUIRLU024Z
|
International Rectifier | 类似代替 | I-PAK |
场效应管(MOSFET) AUIRLU024Z IPAK
|
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IRF | 类似代替 |
N 通道功率 MOSFET 13A 至 19A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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