Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 7.70 A
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR014PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRLR014PBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRLR014TR
|
International Rectifier | 完全替代 | TO-252 |
Mosfet n-Ch 60V 7.7A Dpak
|
||
IRLR014TR
|
VISHAY | 完全替代 | TO-252-3 |
Mosfet n-Ch 60V 7.7A Dpak
|
||
IRLR014TR
|
Vishay Semiconductor | 完全替代 |
Mosfet n-Ch 60V 7.7A Dpak
|
|||
IRLR014TR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Mosfet n-Ch 60V 7.7A Dpak
|
||
IRLR014TRPBF
|
Vishay Intertechnology | 完全替代 | DPAK-2 |
Trans MOSFET N-CH 60V 7.7A 3Pin(2+Tab) DPAK T/R
|
||
IRLR014TRPBF
|
International Rectifier | 完全替代 | TO-252 |
Trans MOSFET N-CH 60V 7.7A 3Pin(2+Tab) DPAK T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review