Technical parameters/power supply current: 200 µA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 680 mW
Technical parameters/common mode rejection ratio: 70 dB
Technical parameters/conversion rate: 3.50 V/μs
Technical parameters/gain bandwidth product: 1 MHz
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 30 pA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 680 mW
Technical parameters/Common Mode Rejection Ratio (Min): 80 dB
Technical parameters/power supply voltage (Max): 36 V
Technical parameters/power supply voltage (Min): 6 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 105℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TL061CD
|
ST Microelectronics | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TL061CD 运算放大器, 单路, 1 MHz, 1个放大器, 3.5 V/µs, 7V 至 36V, SOIC, 8 引脚
|
||
TL061IDR
|
TI | 完全替代 | SOIC-8 |
JFET 输入运算放大器，TL060 系列 Texas Instruments TL060 系列是低功率 JFET 输入运算放大器，可提供出色的性能，其功耗与 TL080 系列相比显著降低。 ### 运算放大器，Texas Instruments
|
||
TL061IDT
|
ST Microelectronics | 类似代替 | SOIC-8 |
TL061 系列 36 V 1 MHz 低功耗 JFET 单通道 运算放大器 - SOIC-8
|
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