Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/product series: IRLML2502GPBF
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 740pF @15V(Vds)
Technical parameters/rated power (Max): 1.25 W
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/width: 1.3 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML2502GPBF
|
Infineon | 功能相似 | SOT-23 |
SOT-23 N-CH 20V 4.2A
|
||
IRLML2502TRPBF
|
Infineon | 完全替代 | SOT-23-3 |
INFINEON IRLML2502TRPBF 场效应管, MOSFET, N沟道, 20V, 4.2A, SOT-23-3, 整卷
|
||
IRLML2502TRPBF
|
International Resistive | 完全替代 |
INFINEON IRLML2502TRPBF 场效应管, MOSFET, N沟道, 20V, 4.2A, SOT-23-3, 整卷
|
|||
IRLML2502TRPBF
|
International Rectifier | 完全替代 | SOT-23-3 |
INFINEON IRLML2502TRPBF 场效应管, MOSFET, N沟道, 20V, 4.2A, SOT-23-3, 整卷
|
||
|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
|||
L250
|
Chemi-Con | 功能相似 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
|||
L250
|
TE Connectivity | 功能相似 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
|||
ZXMN2F30FHTA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
ZXMN2F30FHTA 编带
|
||
|
|
Zetex | 功能相似 | SOT-23-3 |
ZXMN2F30FHTA 编带
|
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