Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 20.0 A
Technical parameters/dissipated power: 37000 mW
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/leakage source breakdown voltage: 55.0V (min)
Technical parameters/Continuous drain current (Ids): 22.0 A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 880pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 37000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/height: 9.8 mm
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLIZ34NPBF
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IRLIZ34NPBF 晶体管, MOSFET, N沟道, 20 A, 55 V, 35 mohm, 10 V, 2 V
|
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