Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 16V
Other/Maximum Drain Current Id Drain Current: 2.8A
Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 0.14Ω/Ohm @20A,10V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1.0-2.0V
Other/dissipative power Pd Power Dissipation: 2.1W
Other/Specification PDF: __
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLL014NPBF
|
International Rectifier | 类似代替 | SOT-223-4 |
INFINEON IRLL014NPBF 晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
|
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IRLL014NPBF
|
IFA | 类似代替 |
INFINEON IRLL014NPBF 晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
|
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STN2NF06L
|
ST Microelectronics | 功能相似 | SOT-223 |
N沟道60V - 0.1欧姆 - 2A SOT- 223 STripFET⑩ II功率MOSFET N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET
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