Technical parameters/drain source resistance: 270 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 7.20 A
Technical parameters/rise time: 64 ns
Technical parameters/Input capacitance (Ciss): 490pF @25V(Vds)
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 37W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLI520G
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 7.2A TO220FP
|
|||
IRLI520G
|
International Rectifier | 完全替代 | TO-220 |
MOSFET N-CH 100V 7.2A TO220FP
|
||
IRLI520G
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 100V 7.2A TO220FP
|
||
IRLI520G
|
VISHAY | 完全替代 | TO-220-3 |
MOSFET N-CH 100V 7.2A TO220FP
|
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