Technical parameters/rated power: 110 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.012 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 94 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 64A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 1650pF @25V(Vds)
Technical parameters/descent time: 9.1 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 94W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL3103SPBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRL3103SPBF 晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
|
||
IRL3103SPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRL3103SPBF 晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
|
||
IRL3103STRRPBF
|
International Rectifier | 类似代替 |
D2PAK N-CH 30V 64A
|
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