Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 17.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 83.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR15N20DPBF
|
Infineon | 功能相似 | TO-252-3 |
INFINEON IRFR15N20DPBF 晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
|
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