Technical parameters/dissipated power: 3.7W (Ta), 88W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 930pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Intertechnology | 功能相似 | D2PAK |
Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
|
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IRL530STRR
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 15A D2PAK
|
||
IRL530STRR
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 15A D2PAK
|
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