Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 5.60 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 43 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 47 ns
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 43 W
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL510
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
IRL510
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
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