Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 17.0 A
Technical parameters/dissipated power: 45 W
Technical parameters/product series: IRG4IBC30KD
Technical parameters/rise time: 42.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 42 ns
Technical parameters/rated power (Max): 45 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.75 mm
External dimensions/width: 4.8 mm
External dimensions/height: 16.13 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4IBC30KD
|
IRF | 完全替代 |
Trans IGBT Chip N-CH 600V 17A 3Pin (3+Tab) TO-220 Full-Pak
|
|||
IRG4IBC30KD
|
Infineon | 完全替代 | TO-220-3 |
Trans IGBT Chip N-CH 600V 17A 3Pin (3+Tab) TO-220 Full-Pak
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review