Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 11.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 63.0 W
Technical parameters/product series: IRGS4B60KD1
Technical parameters/rise time: 23.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 93 ns
Technical parameters/rated power (Max): 63 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRGS4B60KD1
|
Infineon | 功能相似 | D2PAK-263 |
Trans IGBT Chip N-CH 600V 11A 3Pin (2+Tab) D2PAK
|
||
IRGS4B60KD1
|
International Rectifier | 功能相似 |
Trans IGBT Chip N-CH 600V 11A 3Pin (2+Tab) D2PAK
|
|||
IRGS4B60KD1TRLP
|
International Rectifier | 完全替代 | TO-263-3 |
Trans IGBT Chip N-CH 600V 11A 63000mW 3Pin(2+Tab) D2PAK T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review