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Model IRGS6B60KDTRLP
Description IGBT Up to 20A, Infineon optimized IGBT design is used for mid frequency applications, providing fast response and maximum efficiency for users. These devices utilize FRED optimized diodes to provide optimal IGBT performance. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
11.52  yuan 11.52yuan
5+:
$ 13.4726
50+:
$ 12.8968
200+:
$ 12.5744
500+:
$ 12.4938
1000+:
$ 12.4132
2500+:
$ 12.3211
5000+:
$ 12.2635
7500+:
$ 12.2059
Quantity
5+
50+
200+
500+
1000+
Price
$13.4726
$12.8968
$12.5744
$12.4938
$12.4132
Price $ 13.4726 $ 12.8968 $ 12.5744 $ 12.4938 $ 12.4132
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8693) Minimum order quantity(5)
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Technical parameters/rated power: 90 W

Technical parameters/dissipated power: 90 W

Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/reverse recovery time: 70 ns

Technical parameters/rated power (Max): 90 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 90 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.31 mm

External dimensions/width: 9.45 mm

External dimensions/height: 4.57 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRGS6B60KDPBF IRGS6B60KDPBF International Rectifier 完全替代 TO-263-3
Co-Pack IGBT 高达 20A，Infineon Infineon 的隔离栅极双极晶体管 (IGBT) 为用户提供完整系列选项，以确保覆盖您的应用。 高效额定值使此系列 IGBT 可用于各种应用，且由于具有低切换损耗，可支持各种切换频率。 IGBT 带组合封装快速软恢复并联二极管，用于桥式配置
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IRGS6B60KDTRRP IRGS6B60KDTRRP Infineon 类似代替 TO-263-3
Trans IGBT Chip N-CH 600V 13A 90000mW 3Pin(2+Tab) D2PAK T/R
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