Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 22.0 A
Technical parameters/product series: IRGS10B60KD
Technical parameters/rise time: 20.0 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRGS10B60KD
|
International Rectifier | 功能相似 |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
|
|||
IRGS10B60KDTRLP
|
Infineon | 类似代替 | TO-263-3 |
Trans IGBT Chip N-CH 600V 22A 156000mW 3Pin(2+Tab) D2PAK T/R
|
||
IRGS10B60KDTRLP
|
International Rectifier | 类似代替 | D-PAK-3 |
Trans IGBT Chip N-CH 600V 22A 156000mW 3Pin(2+Tab) D2PAK T/R
|
||
|
|
Microsemi | 功能相似 | DO-214AB |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
|
||
|
|
JST | 功能相似 |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
|
|||
S10B
|
Micro Commercial Components | 功能相似 | DO-214AB |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review