Technical parameters/dissipated power: 58000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 48 ns
Technical parameters/rated power (Max): 58 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 58000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRGR4607DTRPBF
|
Infineon | 完全替代 | TO-252-3 |
Trans IGBT Chip N-CH 600V 11A 58000mW 3Pin(2+Tab) DPAK T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review