Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 12.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 39 W
Technical parameters/product series: IRGIB7B60KD
Technical parameters/rise time: 22 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 95 ns
Technical parameters/rated power (Max): 39 W
Technical parameters/descent time: 42 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | TO-220-3 |
Trans IGBT Chip N-CH 600V 12A 3Pin (3+Tab) TO-220AB
|
||
IRGIB7B60KD
|
International Rectifier | 功能相似 |
Trans IGBT Chip N-CH 600V 12A 3Pin (3+Tab) TO-220AB
|
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