Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 40.0 A
Technical parameters/number of pins: 3
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 215 W
Technical parameters/product series: IRGB20B60PD1
Technical parameters/rise time: 5 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/thermal resistance: 0.58℃/W (RθJC)
Technical parameters/reverse recovery time: 28 ns
Technical parameters/rated power (Max): 215 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/width: 4.69 mm
External dimensions/height: 8.77 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTP20N60A4
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HGTP20N60A4 单晶体管, IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-220AB, 3 引脚
|
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