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Model IRG4RC10UTRLPBF
Description Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
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Brand: Infineon
Packaging TO-252-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2697) Minimum order quantity(1)
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Technical parameters/dissipated power: 38000 mW

Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/rated power (Max): 38 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 38000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRG4RC10UTRPBF IRG4RC10UTRPBF Infineon 类似代替 TO-252-3
IGBT 晶体管 600V UltraFast 8-60kHz
PDF
IRG4RC10UTRPBF IRG4RC10UTRPBF International Rectifier 类似代替 TO-252
IGBT 晶体管 600V UltraFast 8-60kHz
PDF

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