Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.70 A
Technical parameters/drain source resistance: 400 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.70 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 类似代替 | DPAK |
先进的功率MOSFET Advanced Power MOSFET
|
||
IRFR110ATF
|
Fairchild | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 4.7A 3Pin(2+Tab) DPAK T/R
|
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