Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 72.0 A
Technical parameters/drain source resistance: 12 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/product series: IRFZ48VS
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 72.0 A
Technical parameters/rise time: 200 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/packaging: D2PAK-263
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ48VS
|
Infineon | 功能相似 | TO-263-3 |
D2PAK N-CH 60V 72A
|
||
IRFZ48VS
|
International Rectifier | 功能相似 | TO-263 |
D2PAK N-CH 60V 72A
|
||
STB55NF06T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
||
STB60NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
|
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