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Model IRG4BC20UD
Description Ultra fast soft recovery diode insulated gate bipolar transistor (VCES=600V, typical VCE (on) value=1.85 V ， @ VGE = 15V ， IC = 6.5A ） INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
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Brand: IRF
Packaging TO-220-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1417) Minimum order quantity(1)
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Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRG4BC20UDPBF IRG4BC20UDPBF Infineon 完全替代 TO-220-3
INFINEON IRG4BC20UDPBF 单晶体管, IGBT, 13 A, 2.4 V, 60 W, 600 V, TO-220AB, 3 引脚
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