Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -3.05 A
Technical parameters/drain source resistance: 85.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 730mW (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.05 A
Technical parameters/rise time: 16.0 ns
Technical parameters/Input capacitance (Ciss): 750pF @24V(Vds)
Technical parameters/rated power (Max): 730 mW
Technical parameters/dissipated power (Max): 730mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMS3P03R2
|
ON Semiconductor | 完全替代 | SOIC-8 |
功率MOSFET -3.05安培,伏特-30 Power MOSFET -3.05 Amps, -30 Volts
|
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