Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 110W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 49A
Technical parameters/Input capacitance (Ciss): 1800pF @25V(Vds)
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
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INFINEON IRFZ44NPBF 晶体管, MOSFET, N沟道, 41 A, 55 V, 0.0175 ohm, 10 V, 4 V
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IRF | 功能相似 |
INFINEON IRFZ44NPBF 晶体管, MOSFET, N沟道, 41 A, 55 V, 0.0175 ohm, 10 V, 4 V
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Intel | 功能相似 |
INFINEON IRFZ44NPBF 晶体管, MOSFET, N沟道, 41 A, 55 V, 0.0175 ohm, 10 V, 4 V
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IRFZ46NPBF
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Infineon | 功能相似 | TO-220-3 |
INFINEON IRFZ46NPBF 晶体管, MOSFET, N沟道, 46 A, 55 V, 0.0165 ohm, 10 V, 4 V
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