Technical parameters/dissipated power: 88W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ34
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
IRFZ34
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
IRFZ34
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
|||
IRFZ34PBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 60V 30A TO-220AB
|
|||
IRFZ34PBF
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
MOSFET N-CH 60V 30A TO-220AB
|
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