Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 75 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/rated power (Max): 75 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 75000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ34PBF
|
International Rectifier | 类似代替 |
MOSFET N-CH 60V 30A TO-220AB
|
|||
IRFZ34PBF
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 60V 30A TO-220AB
|
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