Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 120 A
Technical parameters/drain source resistance: 5.8 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 230 W
Technical parameters/product series: IRFS3307Z
Technical parameters/threshold voltage: 2V ~ 4V
Technical parameters/input capacitance: 4750pF @38V
Technical parameters/gate charge: 110 nC
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 120 A
Technical parameters/Input capacitance (Ciss): 4750pF @50V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/height: 4.576 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB140NF75T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STB140NF75 系列 N 沟道 75 V 0.0075 Ω 160 nC STripFET™II MosFet - D2PAK
|
||
STB150NF55T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB150NF55T4 晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 4 V
|
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